MOIP1200P SigOFIT probe head
€18,999.00 Net
€22,608.81 incl. VAT
In Stock, Delivery time: 1-3 days
In Stock, Delivery time: 1-3 days
Features
- Bandwidth 1.2 GHz
- rise time ≤350ps
- accuracy < 1%
- CMRR: 106dB (1.2 GHz)
Description
The Micsig MOIP1200P is a 1.2 GHz optically isolated probe for high-voltage floating measurements on wide-bandgap power devices. It is the flagship of the MOIP series and is built on Micsig's third-generation SigOFIT™ optical isolation technology.
SiC and GaN devices switch in nanoseconds. Bus voltages are rising, and common-mode interference is harder to control. Conventional high-voltage differential probes struggle to combine bandwidth, common-mode rejection and safety.
The MOIP1200P takes a different approach. The probe head converts the signal to light, sends it over optical fiber and converts it back to an electrical signal at the oscilloscope. The head runs on a laser-powered supply. The device under test and the oscilloscope are fully isolated, so ground loops are eliminated.
Key Features
- Bandwidth: 1.2 GHz
- Rise time: ≤ 350 ps
- Common-mode rejection ratio: Up to 180 dB at DC; 106 dB at 1.2 GHz
- Common-mode voltage: Up to 85 kVpk
- Input capacitance: As low as 1 pF
- Differential measurement range: ±0.01 V to ±20 kV (with optional attenuator heads)
- Noise: < 0.45 mVrms
- DC gain accuracy: Better than 1%
- Output interface: BNC, compatible with oscilloscopes of all brands
- Operation: Zero temperature drift, no manual calibration, 365 × 24 continuous testing
Advantages
- See the real switching edge: 1.2 GHz bandwidth and ≤ 350 ps rise time capture the fastest GaN switching transitions.
- Clean high-side waveforms:106 dB CMRR at 1.2 GHz suppresses the high-frequency common-mode oscillation that distorts floating measurements.
- No ground loops: Optical isolation removes the electrical path between your circuit and your oscilloscope.
- Headroom for higher bus voltage: 85 kVpk common-mode voltage covers demanding high-voltage designs.
- Minimal circuit loading: 1 pF input capacitance does not disturb sensitive nodes such as GaN gate drivers.
- One probe, wide range: rift and no manual calibration support long, uninterrupted test runs.
- Fits your existing setup: Standard BNC output works with oscilloscopes from any manufacturer.
The SigOFIT Gen 3 series is engineered to meet the highest safety and performance standards, providing engineers with a reliable solution for precise differential measurements in challenging high-voltage and high-frequency environments.
Features
Further information

CMRR
The SigOFIT probe has a high common mode rejection ratio (CMRR) of up to 108dB at 1GHz.

GaN suitable
The Micsig SigOFIT probes were developed specifically for GaN and similar applications. To meet the high requirements, the measuring leads are short and the input capacitance is less than 3pF input capacitance.

High accuracy
The SigOFIT probe has excellent amplitude-frequency characteristics and the accuracy of the DC gain is better than 1 %. The maximum noise floor within the range is <0.45 mVrms, and the zero drift is <0.1%.

For third generation semiconductors
SiC and GaN devices can switch high voltages in a few nanoseconds and the signal can exhibit high-energy, high-frequency harmonics.
Specifications
| Model comparison | MOIP200P | MOIP350P | MOIP500P | MOIP1000P | MOIP1200P |
|---|---|---|---|---|---|
| Bandwidth | 200 MHz | 350 MHz | 500 MHz | 1GHz | 1.2 GHz |
| Rise time | ≤1.5ns | ≤1ns | ≤800ps | ≤450ps | ≤350ps |
| CMRR | DC: 180dB 200MHz: 122dB | DC: 180dB 350MHz: 118dB | DC: 180dB 500MHz: 114dB | DC: 180dB 1GHz: 108dB | DC: 180dB 1.2GHz: 106dB |
| Differential voltage ranges | 20X: ±10V 50X: ±25V 100X: ±50 V200X: ±100V 500X: ±250V 1000X: ±500V 2000X: ±1000V 5000X: ±2500V |
50X: ±25V 100X: ±50 V 1000X: ±500V 2000X: ±1000V 5000X: ±2500V | 20X: ±10V 50X: ±25V 100X: ±50 V200X: ±100V 500X: ±250V 1000X: ±500V 2000X: ±1000V 5000X: ±2500V | 20X: ±10V 50X: ±25V 100X: ±50 V200X: ±100V 500X: ±250V 1000X: ±500V 2000X: ±1000V 5000X: ±2500V | 20X: ±10V 50X: ±25V 100X: ±50 V200X: ±100V 500X: ±250V 1000X: ±500V 2000X: ±1000V 5000X: ±2500V |
| Noise | <0.3mVrms | <0.3mVrms | <0.3mVrms | <0.45mVrms | <0.45mVrms |
| Power supply | USB Type-C, DC: 12 V | USB Type-C, DC: 12 V | USB Type-C, DC: 12 V | USB Type-C, DC: 12 V | USB Type-C, DC: 12 V |
| DC amplification accuracy | 1 % | 1 % | 1 % | 1 % | 1 % |
| Common mode voltage range | 85kVpk | 85kVpk | 85kVpk | 85kVpk | 85kVpk |
| CableLength | 2m (customisable) | 2m (customisable) | 2m (customisable) | 2m (customisable) | 2m (customisable) |
Specification attenuators
| Probe tip | Attenuation | Differential voltage range (MOIP200P/350P/500P/1000P/1200P) | Input impedance |
|---|---|---|---|
| OP20 | 2X/20X | ±1V / ±10V | 4.47MΩ || ≤ 4pF |
| OP50 | 5X/50X | ±2.5V / ±25V | 4.19MΩ || ≤ 2pF |
| OP100 | 10X/100X | ±5V / ±50V | 4.10MΩ || ≤ 2pF |
| OP200 | 20X/200X | ±10V / ±100V | 8MΩ || ≤ 1pF |
| OP500 | 50X/500X | ±25V / ±250V | 5MΩ || ≤ 1pF |
| OP1000 | 100X/1000X | ±50V / ±500V | 20.94MΩ || ≤ 1pF |
| OP2000 | 200X/2000X | ± 100V / ± 1000V | 20.52MΩ || ≤ 1pF |
| OP5000 | 500X/5000X | ± 250V / ± 2500V | 40.82MΩ || ≤1pF |
| OP10000 | 1000X/10000X | ± 500V / ± 5000V | 40.82MΩ || ≤ 1pF |
| OP20000 | 2000X/20000X | ±1000V / ±10000V | 120 MΩ / 2 pF |
| OP30000 | 3000X/30000X | ±1500V / ±15000V | 180 MΩ / 1 pF |
| OP40000 | 4000X/40000X | ±2000V / ±20000V | 240 MΩ / 1 pF |
| OP5000-RF | 500X/5000X | ±250V / ±2500V |




















